The EL452-G contains an infrared emitting diode, optically coupled to a high voltage darlington phototransistor. It is packaged in a 4-pin small outline SMD package.
Features
• High collect-Emitter voltage (VCEO = 350V) • Current transfer ratio (CTR: Min. 1000% at IF =1mA VCE =2V) • High isolation voltage between input and output (Viso=3750 V rms ) • Pb free and RoHS compliant.
Other Applications
• Low power logic circuits • Telecommunications equipment • Portable electronics • Interfacing coupling systems of different potentials and impedances
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