The ELS31X0 series consist of an infrared light emitting diodes coupled to an integrated circuit with a power output stage. The photo coupler has an internal shield that provides guaranteed common-mode transient immunity of ±25 kV/μs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
• Peak Output Current : IOP = 2.5A (max)
• Guaranteed performance from -40 to 110℃
• High isolation voltage between input and output (Viso=5000 V rms.)
• Pb free and RoHS compliant
• Isolated IGBT/Power MOSFET Gate Drive
• Uninterruptible power supply
• Home appliances such as fan heaters