The ELS31X0 series consist of an infrared light emitting diodes coupled to an integrated circuit with a power output stage. The photo coupler has an internal shield that provides guaranteed common-mode transient immunity of ±25 kV/μs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
Features
• Peak Output Current : IOP = 2.5A (max) • Guaranteed performance from -40 to 110℃ • High isolation voltage between input and output (Viso=5000 V rms.) • Pb free and RoHS compliant
Other Applications
• Isolated IGBT/Power MOSFET Gate Drive • Uninterruptible power supply • Inverters • Home appliances such as fan heaters
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