The EL0500, EL0501, EL0452 and EL0453 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The EL0600, EL0601 and EL0611 devices each consists of an infrared emitting diode optically coupled to a high speed integrated photo detector logic gate with a strobable output. The devices are packaged in an 8-pin small outline package which conforms to the standard SO-8 footprint.
Features
• High speed 1Mbit/s, 10Mbit/s, 15Mbit/s • Guaranteed performance from 0°C to 70°C • High isolation voltage between input and output (Viso=3750 Vrms ) • Pb free and RoHS and Halogen free complian
Other Applications
• Line receivers • Telecommunication equipments • Power transistor isolation in motor drives • Replacement for low speed phototransistor photo couplers • Feedback loop in switch-mode power supplies • Home appliances
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