The ELM452 and ELM453 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The ELM600, ELM601 and ELM611 are consists of an infrared emitting diode optically coupled to a high speed integrated photo detector logic gate with a strobable output. The devices are packaged in a 5-pin small outline package which conforms to the standard footprint.
Features
High speed 1Mbit/s
High isolation voltage between input and output (Viso=3750 Vrms )
High CMR 15KV/us at Vcm = 1500V (ELM453)
Guaranteed performance from 0°C to 70°C
Wide operating temperature range of -40°C to 85°C
Pb free and RoHS and Halogen free compliat
Other Applications
Line receivers
Field bus communication and control.
Power transistor isolation in motor drives.
Replacement for low speed phototransistor photo couplers.
High speed logic ground isolation.
Analog signal ground isolation.
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