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IGBT Gate Driver 8Pin DIP-DC
The EL31X0 series consist of an infrared light emitting diodes and integrated high gain, high-speed photo detectors. The device is housed in a 8 pin DIP package. The photo detector has an internal shield that provides guaranteed common-mode transient immunity of ±25 kV/μs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
Features
• Peak Output Current : IOP = 2.5A (max)
• Guaranteed performance from -40 to 110℃
• High isolation voltage between input and output (Viso=5000 V rms.)
• Pb free and RoHS compliant
Other Applications
• Isolated IGBT/Power MOSFET Gate Drive
• Uninterruptible power supply
• Inverters
• Home appliances such as fan heaters